BYC10-600CT NXP Semiconductors, BYC10-600CT Datasheet - Page 2

• Manufacturer Part Number: BYC10-600CT
• Description: Dual hyperfast power diode in a SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
• Dual diode
• Extremely fast switching
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in
associated MOSFET
APPLICATIONS
• Active power factor correction
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched
mode power supplies.
The BYC10-600CT is supplied in
the SOT78 (TO220AB)
conventional leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCES
1 T
March 2001
Rectifier diode
ultrafast, low switching loss
SYMBOL PARAMETER
V
V
V
I
I
I
T
T
SYMBOL PARAMETER
R
R
O(AV)
FRM
FSM
RRM
RWM
R
stg
j
th j-mb
th j-a
mb(max)
limited by thermal runaway
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average output current (both
diodes conducting)
Repetitive peak forward current δ = 0.5; with reapplied V
per diode
Non-repetitive peak forward
current per diode
Storage temperature
Operating junction temperature
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
PINNING
SYMBOL
PIN
tab
1
2
3
a1
CONDITIONS
T
δ = 0.5; with reapplied V
T
T
t = 10 ms
t = 8.3 ms
sinusoidal; T
with reapplied V
CONDITIONS
per diode
both diodes
in free air.
1
mb
mb
mb
anode 1
cathode
anode 2
cathode
≤ 110 ˚C
≤ 50 ˚C
≤ 50 ˚C
DESCRIPTION
k
1
1
1
2
j
= 150˚C prior to surge
RWM(max)
a2
3
RRM(max)
RRM(max)
;
;
QUICK REFERENCE DATA
SOT78 (TO220AB)
MIN.
MIN.
-
-
-
-40
-
-
-
-
-
-
-
-
t
rr
I
V
V
O(AV)
= 19 ns (typ)
Product specification
TYP.
F
tab
R
60
BYC10-600CT
≤ 1.75 V
= 600 V
-
-
= 10 A
1 2 3
MAX.
600
600
500
150
150
10
10
40
44
MAX.
2.5
2.2
-
Rev 1.200
UNIT
UNIT
K/W
K/W
K/W
˚C
˚C
V
V
V
A
A
A
A