BYC10-600CT NXP Semiconductors, BYC10-600CT Datasheet - Page 3

• Manufacturer Part Number: BYC10-600CT
• Description: Dual hyperfast power diode in a SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

ELECTRICAL CHARACTERISTICS
T
March 2001
Rectifier diode
ultrafast, low switching loss
conduction mode, where the transistor turns on whilst
j
SYMBOL PARAMETER
V
I
t
t
t
I
I
V
R
rr
rr
rr
rrm
rrm
converter power factor correction circuit. Continuous
= 25 ˚C, per diode unless otherwise stated
F
fr
Fig.1. Typical application, output rectifier in boost
Semiconductors
Vin
forward current is still flowing in the diode.
Forward voltage
Reverse current
Reverse recovery time
Reverse recovery time
Reverse recovery time
Peak reverse recovery current
Peak reverse recovery current
Forward recovery voltage
150 uH
typ
IL
500 V MOSFET
ID
OUTPUT DIODE
Vo = 400 V d.c.
CONDITIONS
I
I
I
V
V
I
I
dI
I
dI
I
dI
I
dI
I
F
F
F
F
F
F
F
F
F
R
R
F
F
F
F
= 5 A; T
= 10 A; T
= 5 A;
= 1 A; V
= 5 A; V
= 5 A; V
= 5 A; V
= 5 A; V
= 10 A; dI
/dt = 500 A/μs
/dt = 500 A/μs; T
/dt = 50 A/μs; T
/dt = 500 A/μs; T
= 600 V
= 500 V; T
j
R
R
R
R
R
2
= 150˚C
j
= 30 V; dI
= 400 V;
= 400 V;
= 400 V;
= 400 V;
F
= 150˚C
/dt = 100 A/μs
j
bridge converter. Continuous conduction mode, where
= 100 ˚C
Fig.2. Typical application, freewheeling diode in half
each transistor turns on whilst forward current is still
j
= 125˚C
j
j
Vin Vin = 400 V d.c.
= 100˚C
= 125˚C
F
/dt = 50 A/μs
flowing in the other bridge leg diode.
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
1.75
1.4
2.0
0.9
0.7
Product specification
30
19
25
BYC10-600CT
9
8
9
IL
inductive load
MAX.
IR
1.75
100
2.2
2.9
3.0
50
30
11
11
3
-
IF
Rev 1.200
UNIT
mA
μA
ns
ns
ns
V
V
V
A
A
V