BYC10-600CT NXP Semiconductors, BYC10-600CT Datasheet - Page 5

• Manufacturer Part Number: BYC10-600CT
• Description: Dual hyperfast power diode in a SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

March 2001
Fig.9. Definition of reverse recovery parameters t
Fig.10. Typical forward recovery voltage per diode, V
Rectifier diode
ultrafast, low switching loss
I
I
R
V F
F
Fig.11. Definition of forward recovery voltage V
I
as a function of rate of change of current dI
20
15
10
F
Semiconductors
5
0
0
Peak forward recovery voltage, Vfr (V)
Tj = 25 C
IF = 10 A
Rate of change of current, dIF/dt (A/ s)
I
rrm
50
dI
dt
Q
F
s
100
t
rr
150
V F
10%
BYC5-600
typ
time
time
F
time
/dt.
200
100%
V
rr
, I
fr
fr
rrm
fr
4
Fig.13. Typical reverse leakage current per diode as
a function of reverse voltage. I
Fig.12. Typical and maximum forward characteristic
Fig.14. Maximum thermal impedance per diode,
100mA
100uA
10
10mA
0.001
10uA
8
6
4
2
0
1mA
0.01
1uA
per diode, I
0.1
0
10
Forward current, IF (A)
Tj = 25 C
Tj = 150 C
1
1us
0
Transient thermal impedance, Zth j-mb (K/W)
Z
Reverse leakage current (A)
th j-mb
10us
100
as a function of pulse width.
1
F
100us
= f(V
typ
Forward voltage, VF (V)
200
pulse width, tp (s)
Reverse voltage (V)
F
1ms
); T
2
P
j
300
D
max
= 25˚C and 150˚C.
10ms 100ms
R
t
Tj = 125 C
= f(V
Product specification
p
BYC10-600CT
T
400
100 C
75 C
50 C
25 C
R
3
D =
); parameter T
BYV29
BYC5-600
500
t
T
p
1s
t
BYC5-600
Rev 1.200
10s
600
4
j