BYV32G-200 NXP Semiconductors, BYV32G-200 Datasheet

Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package

BYV32G-200

Manufacturer Part Number
BYV32G-200
Description
Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYV32G-200
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package.
Table 1.
Symbol
V
I
I
I
V
Static characteristics
V
O(AV)
FSM
RRM
RRM
ESD
F
BYV32G-200
Dual ultrafast power diode
Rev. 01 — 11 January 2011
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Output rectifiers in high-frequency
switched-mode power supplies
Quick reference data
Parameter
repetitive peak reverse
voltage
average output current
non-repetitive peak
forward current
repetitive peak reverse
current
electrostatic discharge
voltage
forward voltage
Conditions
square-wave pulse; δ = 0.5 ;
T
conducting; see
see
T
sine-wave pulse; per diode
t
HBM; C = 250 pF; R = 1.5 kΩ;
all pins
I
see
p
F
mb
j(init)
= 2 µs; δ = 0.001
= 8 A; T
Figure 2
Figure 4
≤ 115 °C; both diodes
= 25 °C; t
j
= 150 °C;
p
Figure
= 10 ms;
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
-
0.72 0.85 V
Max Unit
200
20
125
0.2
8
V
A
A
A
kV

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BYV32G-200 Summary of contents

Page 1

... BYV32G-200 Dual ultrafast power diode Rev. 01 — 11 January 2011 1. Product profile 1.1 General description Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package. 1.2 Features and benefits High reverse voltage surge capability High thermal cycling performance Low thermal resistance 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1 ...

Page 2

... A; see Simplified outline SOT226A (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 BYV32G-200 Dual ultrafast power diode Min Typ = °C; j Figure 5 = 0.5 A ...

Page 3

... HBM 250 pF 1.5 kΩ; all pins 003aac978 a = 1.57 1 (A) F(AV) Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 BYV32G-200 Dual ultrafast power diode Min - - - ≤ 115 ° Figure 1; ≤ 115 °C; per diode - °C; ...

Page 4

... Figure th(j-mb) (K/W) 1 − −2 10 −3 10 −6 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 BYV32G-200 Dual ultrafast power diode Min Typ - - - - - 60 003aac980 t p δ − (s) ...

Page 5

... A/µ see Figure 7 003aac981 I F (2) ( 1.2 1.6 V (V) F Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 BYV32G-200 Dual ultrafast power diode Min Typ - 1 Figure 4 - 0. A/µ /dt = 100 A/µ Figure 5 ...

Page 6

... Product data sheet I F time 0. 003aac563 Fig 7. Forward recovery definitions All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 BYV32G-200 Dual ultrafast power diode time V FRM V F time 001aab912 © NXP B.V. 2011. All rights reserved ...

Page 7

... References JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 BYV32G-200 Dual ultrafast power diode 2.6 3.0 (REF) 2.2 European projection SOT226A sot226a_po Issue date 09-08-17 09-08-25 © NXP B.V. 2011. All rights reserved. ...

Page 8

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BYV32G-200 v.1 20110111 BYV32G-200 Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 BYV32G-200 Dual ultrafast power diode ...

Page 9

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 BYV32G-200 Dual ultrafast power diode © NXP B.V. 2011. All rights reserved ...

Page 10

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 BYV32G-200 Dual ultrafast power diode Trademarks © NXP B.V. 2011. All rights reserved ...

Page 11

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 11 January 2011 Document identifier: BYV32G-200 ...

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