BYV32G-200 NXP Semiconductors, BYV32G-200 Datasheet - Page 4

• Manufacturer Part Number: BYV32G-200
• Description: Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BYV32G-200
Product data sheet
Symbol
R
R
Fig 3.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse width
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
10
−1
−2
−3
1
10
−6
All information provided in this document is subject to legal disclaimers.
10
−5
Rev. 01 — 11 January 2011
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode;
see
10
−4
Figure 3
10
−3
10
P
−2
10
t
p
−1
T
003aac980
δ =
1
t
p
T
(s)
t
t
p
10
Min
-
-
-
Dual ultrafast power diode
BYV32G-200
Typ
-
-
60
© NXP B.V. 2011. All rights reserved.
Max
1.6
2.4
-
Unit
K/W
K/W
K/W
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