BYV32G-200 NXP Semiconductors, BYV32G-200 Datasheet - Page 5

• Manufacturer Part Number: BYV32G-200
• Description: Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BYV32G-200
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
V
R
rr
Fig 4.
F
FR
r
(A)
I
F
32
24
16
8
0
voltage
Forward current as a function of forward
0
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
forward recovery voltage
0.4
(1)
0.8
(2)
(3)
1.2
All information provided in this document is subject to legal disclaimers.
003aac981
V
F
Conditions
I
I
V
V
I
T
I
ramp recovery; T
I
measured at reverse current = 0.25 A;
T
I
see
(V)
F
F
F
F
F
F
j
j
R
R
= 20 A; T
= 8 A; T
= 2 A; V
= 1 A; V
= 0.5 A; I
= 1 A; dI
= 25 °C
= 25 °C; see
= 200 V; T
= 200 V; T
Rev. 01 — 11 January 2011
1.6
Figure 7
j
R
R
F
= 150 °C; see
R
j
/dt = 10 A/µs; T
= 30 V; dI
= 30 V; dI
= 25 °C
= 1 A; step recovery;
j
j
= 100 °C
= 25 °C
Figure 6
j
Fig 5.
= 25 °C; see
I
I
R
F
F
F
/dt = 20 A/µs;
/dt = 100 A/µs;
Figure 4
Reverse recovery definitions; ramp recovery
j
= 25 °C;
dl
dt
F
Figure 5
I
RM
Q
r
t
rr
Min
-
-
-
-
-
-
-
-
Dual ultrafast power diode
BYV32G-200
Typ
1
0.72
0.2
6
8
20
10
-
© NXP B.V. 2011. All rights reserved.
Max
1.15
0.85
0.6
30
12.5
25
20
1
25 %
003aac562
time
Unit
V
V
mA
µA
nC
ns
ns
V
100 %
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