PMEGXX10BEA_PMEGXX10BEV NXP Semiconductors, PMEGXX10BEA_PMEGXX10BEV Datasheet - Page 2

• Manufacturer Part Number: PMEGXX10BEA_PMEGXX10BEV
• Description: Planar Maximum Efficiency General Application (MEGA)Schottky barrier rectifier with an integrated guard ring forstress protection, encapsulated in a very small SOD323(SC-76) and ultra small SOT666 SMD plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
• Forward current: 1 A
• Reverse voltages: 20 V, 30 V, 40 V
• Very low forward voltage
• Ultra small and very small plastic SMD package
• Power dissipation comparable to SOT23.
APPLICATIONS
• High efficiency DC-to-DC conversion
• Voltage clamping
• Protection circuits
• Low voltage rectification
• Blocking diodes
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
MARKING
2004 Jun 14
PMEG2010BEA
PMEG3010BEA
PMEG4010BEA
PMEG2010BEV
PMEG3010BEV
PMEG4010BEV
1 A very low V
barrier rectifier
TYPE NUMBER
F
MEGA Schottky
MARKING CODE
G6
G5
G4
V1
V2
V3
2
QUICK REFERENCE DATA
PINNING
I
V
PMEGXX10BEA (see Fig.1)
PMEGXX10BEV (see Fig.2)
F
SYMBOL
R
The marking bar indicates the cathode.
Fig.1
Fig.2 Simplified outline (SOT666) and symbol.
1, 2, 5, 6
1
Simplified outline (SOD323; SC-76) and
symbol.
1
6
PIN
3, 4
1
2
forward current
reverse voltage
PARAMETER
2
5
3
4
2
PMEGXX10BEA;
cathode
anode
cathode
anode
PMEGXX10BEV
1
20; 30; 40
DESCRIPTION
1, 2
5, 6
Product data sheet
1
MAX.
sym001
sym038
2
3, 4
A
V
UNIT