PMEGXX10BEA_PMEGXX10BEV NXP Semiconductors, PMEGXX10BEA_PMEGXX10BEV Datasheet - Page 5

• Manufacturer Part Number: PMEGXX10BEA_PMEGXX10BEV
• Description: Planar Maximum Efficiency General Application (MEGA)Schottky barrier rectifier with an integrated guard ring forstress protection, encapsulated in a very small SOD323(SC-76) and ultra small SOT666 SMD plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
GRAPHICAL DATA
2004 Jun 14
handbook, halfpage
handbook, halfpage
1 A very low V
barrier rectifier
PMEG2010BEA/PMEG2010BEV
(1) T
(2) T
(3) T
Fig.3
PMEG2010BEA/PMEG2010BEV
T
Fig.5
(pF)
C d
amb
(mA)
10
I F
140
120
100
10
10
10
80
60
40
20
= 25 °C; f = 1 MHz.
10
−1
amb
amb
amb
0
1
4
3
2
0
0
= 150 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
5
(1)
0.2
F
(2)
MEGA Schottky
10
(3)
0.4
15
V F (V)
V R (V)
MHC673
MHC675
0.6
20
5
handbook, halfpage
handbook, halfpage
PMEG2010BEA/PMEG2010BEV
(1) T
(2) T
(3) T
Fig.4
PMEG3010BEA/PMEG3010BEV
(1) T
(2) T
(3) T
Fig.6
(μA)
(mA)
I R
10
I F
10
10
10
10
10
10
10
10
10
−1
amb
amb
amb
amb
amb
amb
1
1
5
4
3
2
4
3
2
0
0
= 150 °C.
= 85 °C.
= 25 °C.
= 150 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
Forward current as a function of forward
voltage; typical values.
5
(1)
0.2
(2)
(1)
(2)
(3)
10
PMEGXX10BEA;
(3)
PMEGXX10BEV
0.4
15
Product data sheet
V F (V)
V R (V)
MHC676
MHC674
0.6
20