PMEGXX10BEA_PMEGXX10BEV NXP Semiconductors, PMEGXX10BEA_PMEGXX10BEV Datasheet - Page 6

• Manufacturer Part Number: PMEGXX10BEA_PMEGXX10BEV
• Description: Planar Maximum Efficiency General Application (MEGA)Schottky barrier rectifier with an integrated guard ring forstress protection, encapsulated in a very small SOD323(SC-76) and ultra small SOT666 SMD plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2004 Jun 14
handbook, halfpage
1 A very low V
barrier rectifier
PMEG3010BEA/PMEG3010BEV
(1) T
(2) T
(3) T
Fig.7
PMEG4010BEA/PMEG4010BEV
(1) T
(2) T
(3) T
Fig.9
(μA)
I R
(mA)
10
I F
10
10
10
10
10
10
10
10
10
amb
amb
amb
−1
amb
amb
amb
1
1
5
4
3
2
4
3
2
0
0
= 150 °C.
= 85 °C.
= 25 °C.
= 150 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
Forward current as a function of forward
voltage; typical values.
5
0.2
10
(1)
(2)
(3)
(1)
F
MEGA Schottky
(2)
15
(3)
0.4
20
V F (V)
25
V R (V)
MHC677
MHC679
0.6
30
6
handbook, halfpage
handbook, halfpage
PMEG3010BEA/PMEG3010BEV
T
Fig.8
PMEG4010BEA/PMEG4010BEV
(1) T
(2) T
(3) T
Fig.10 Reverse current as a function of reverse
(pF)
amb
C d
(μA)
I R
120
100
10
10
10
10
80
60
40
20
= 25 °C; f = 1 MHz.
10
amb
amb
amb
0
1
5
4
3
2
0
0
= 150 °C.
= 85 °C.
= 25 °C.
Diode capacitance as a function of reverse
voltage; typical values.
voltage; typical values.
10
5
(1)
(2)
(3)
10
20
PMEGXX10BEA;
PMEGXX10BEV
15
30
Product data sheet
V R (V)
V R (V)
MHC678
MHC680
20
40