BAV99_SER NXP Semiconductors, BAV99_SER Datasheet - Page 5

• Manufacturer Part Number: BAV99_SER
• Description: High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BAV99_SER
Product data sheet
Fig 1.
Fig 3.
(mA)
(pF )
I
10
(1) T
(2) T
(3) T
(4) T
F
C
10
10
0.8
0.6
0.4
0.2
10
d
−1
1
3
2
0
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
voltage; typical values
0
Diode capacitance as a function of reverse
amb
amb
amb
amb
= 150 °C
= 85 °C
= 25 °C
= −40 °C
0.2
4
0.4
amb
(1)
= 25 °C
(2)
0.6
(3)
8
0.8
(4)
1.0
12
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006aab132
V
1.2
R
V
mbg446
(V)
F
(V)
Rev. 8 — 18 November 2010
1.4
16
Fig 2.
Fig 4.
I
(μA)
FSM
(A)
I
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
10
R
10
10
10
10
−1
−2
−3
−4
−5
−1
1
1
2
2
0
1
Reverse current as a function of reverse
voltage; typical values
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
amb
amb
amb
amb
j
= 25 °C; prior to surge
= 150 °C
= 85 °C
= 25 °C
= −40 °C
20
10
40
High-speed switching diodes
10
BAV99 series
2
(1)
(2)
(3)
(4)
60
10
© NXP B.V. 2010. All rights reserved.
3
80
006aab133
t
p
V
(μs)
R
mbg704
(V)
100
10
4
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