BUK7277-55A NXP Semiconductors, BUK7277-55A Datasheet
BUK7277-55A
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BUK7277-55A Summary of contents
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... BUK7277-55A N-channel TrenchMOS standard level FET Rev. 02 — 26 January 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 January 2011 BUK7277-55A Graphic symbol mbb076 Version SOT428 Min Max - -20 20 Figure 1 - ...
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... D. Conditions see Figure 4 minimum footprint; FR4 board All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 January 2011 BUK7277-55A N-channel TrenchMOS standard level FET 120 der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03nc57 = 10 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7277-55A Product data sheet −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 January 2011 BUK7277-55A N-channel TrenchMOS standard level FET 03nc56 t p δ − ...
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... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 January 2011 BUK7277-55A Min Typ Max Unit 4 ...
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... DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 January 2011 BUK7277-55A N-channel TrenchMOS standard level FET 160 140 120 100 Drain-source on-state resistance as a function of gate-source voltage; typical values ...
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... V (V) GS Fig 10. Gate-source voltage as a function of gate 03aa32 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 January 2011 BUK7277-55A N-channel TrenchMOS standard level FET ( ...
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... Fig 14. Input, output and reverse capacitances as a 120 I S (A) 100 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 January 2011 BUK7277-55A N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nc04 = 25 °C j 1.5 2.0 ...
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... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 January 2011 BUK7277-55A N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7277-55A v.2 20110126 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 January 2011 BUK7277-55A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 January 2011 BUK7277-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 January 2011 Document identifier: BUK7277-55A ...