BUK7277-55A NXP Semiconductors, BUK7277-55A Datasheet - Page 3

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7277-55A

Manufacturer Part Number
BUK7277-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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5. Thermal characteristics
Table 5.
BUK7277-55A
Product data sheet
Symbol
R
R
Fig 1.
Fig 3.
th(j-mb)
th(j-a)
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
50
(A)
I
10
D
10
10
10
−1
1
3
2
1
P
100
t
p
T
δ =
150
t
T
t
p
All information provided in this document is subject to legal disclaimers.
T
mb
R
DSon
03aa24
(°C)
Conditions
see
minimum footprint; FR4 board
Rev. 02 — 26 January 2011
200
= V
Figure 4
DS
/I
D
10
D.C.
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
(V)
50
t
100 μs
1 ms
10 ms
100 ms
p
BUK7277-55A
Min
-
-
100
= 10 μs
03nc57
10
2
Typ
-
71.4
150
© NXP B.V. 2011. All rights reserved.
T
mb
03aa16
Max
2.9
-
(°C)
200
Unit
K/W
K/W
3 of 13

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