BUK7510-100B NXP Semiconductors, BUK7510-100B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7510-100B

Manufacturer Part Number
BUK7510-100B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK7510-100B
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BUK7510-100B
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Quantity:
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK7510-100B
N-channel TrenchMOS standard level FET
Rev. 4 — 4 January 2012
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V, 24 V and 42 V loads
Automotive systems
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
V
see
see
T
see
V
T
see
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C;
Figure
Figure 3
= 25 °C;
Figure 2
Figure
Figure 12
= 10 V; T
= 10 V; I
1;
11;
j
D
≤ 175 °C
mb
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
= 25 A;
= 25 °C;
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
8.6
Max Unit
100
75
300
10
V
A
W
mΩ

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BUK7510-100B Summary of contents

Page 1

... BUK7510-100B N-channel TrenchMOS standard level FET Rev. 4 — 4 January 2012 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 January 2012 BUK7510-100B N-channel TrenchMOS standard level FET Min = °C; j Figure 13 ≤ ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 January 2012 BUK7510-100B N-channel TrenchMOS standard level FET Min - - -20 [1] Figure 1; - [2] - [2] Figure 1 - ≤ 10 µs; ...

Page 4

... Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 January 2012 BUK7510-100B N-channel TrenchMOS standard level FET 003aag933 =10 μ 100 μ 100 (V) DS Min ...

Page 5

... ° see Figure /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 January 2012 BUK7510-100B Min Typ Max 100 - - 4 ...

Page 6

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 January 2012 BUK7510-100B N-channel TrenchMOS standard level FET 11 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 100 g fs ...

Page 7

... Fig 10. Gate-source threshold voltage as a function of 03ng77 150 200 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 January 2012 BUK7510-100B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 120 junction temperature 2 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 January 2012 BUK7510-100B N-channel TrenchMOS standard level FET C iss C oss C rss 0 − function of drain-source voltage; typical values 03ng71 = 25 ° ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 January 2012 BUK7510-100B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7510-100B v.4 20120104 • Modifications: Various changes to content. BUK7510-100B_3 20100414 BUK7510-100B Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 January 2012 BUK7510-100B N-channel TrenchMOS standard level FET © NXP B.V. 2012. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 January 2012 BUK7510-100B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2012. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 January 2012 Document identifier: BUK7510-100B ...

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