BUK7510-100B NXP Semiconductors, BUK7510-100B Datasheet - Page 6

• Manufacturer Part Number: BUK7510-100B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7510-100B
Product data sheet
Fig 5.
Fig 7.
(A)
I
(A)
I
D
10
10
10
10
10
10
D
350
300
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
2
8
4
min
10
20
typ
6
4
V
max
GS
V
All information provided in this document is subject to legal disclaimers.
8
GS
6.5
7
= 4.5 V
V
DS
(V)
03ng76
03aa35
5.5
(V)
10
Rev. 4 — 4 January 2012
6
Fig 6.
Fig 8.
R
(mΩ)
g
(S)
DSon
100
fs
80
60
40
20
11
10
0
9
8
7
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
BUK7510-100B
40
15
60
V
© NXP B.V. 2012. All rights reserved.
GS
I
D
(V)
03ng75
03ng73
(A)
20
80
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