BUK753R4-30B NXP Semiconductors, BUK753R4-30B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK753R4-30B

Manufacturer Part Number
BUK753R4-30B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK753R4-30B
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Part Number:
BUK753R4-30B
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK753R4-30B
N-channel TrenchMOS standard level FET
Rev. 2 — 21 April 2011
AEC Q101 compliant
Suitable for standard level gate drive
sources
12 V loads
Automotive systems
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
V
see
see
T
see
V
T
see
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C;
Figure
Figure 3
Figure 2
Figure
Figure 13
= 25 °C;
= 10 V; T
= 10 V; I
1;
12;
j
D
mb
≤ 175 °C
= 25 A;
= 25 °C;
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
2.9
Max
30
75
255
3.4
Unit
V
A
W
mΩ

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BUK753R4-30B Summary of contents

Page 1

... BUK753R4-30B N-channel TrenchMOS standard level FET Rev. 2 — 21 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B N-channel TrenchMOS standard level FET Min Typ ≤ sup = ...

Page 3

... sup °C; unclamped GS j(init) (max) of 175 ° 170 °C; Refer to application note AN10273 for further information. j All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B Min Max - -20 20 [1][2] Figure 1; - 198 [3] ...

Page 4

... T (°C) j Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B N-channel TrenchMOS standard level FET 120 der 100 Normalized total power dissipation as a function of mounting base temperature = 10 μ 100 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK753R4-30B Product data sheet N-channel TrenchMOS standard level FET Conditions vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B Min Typ Max - - 0. 003aab186 t p δ ...

Page 6

... ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B Min Typ Max 4 0.05 ...

Page 7

... V ( (V) DS Fig 6. 003aab190 75 100 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B N-channel TrenchMOS standard level FET 20 R label is V (V) DSon GS (mΩ) 6.5 5 100 ...

Page 8

... AL Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 −60 ...

Page 9

... C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B N-channel TrenchMOS standard level FET charge; typical values = 175 °C ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK753R4-30B separated from data sheet BUK75_763R4-30B_1. BUK75_763R4-30B_1 20060105 BUK753R4-30B Product data sheet ...

Page 12

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 April 2011 BUK753R4-30B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 April 2011 Document identifier: BUK753R4-30B ...

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