BUK755R2-40B NXP Semiconductors, BUK755R2-40B Datasheet - Page 5
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/53/415315/sot078a_3d_sml.gif)
BUK755R2-40B
Manufacturer Part Number
BUK755R2-40B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK755R2-40B.pdf
(13 pages)
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5. Thermal characteristics
Table 5.
BUK755R2-40B_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z th(j-mb)
(K/W)
10 -1
10 -2
10 -3
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
10 -6
Thermal characteristics
0.1
0.05
0.2
0.02
δ = 0.5
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
single shot
10 -5
Conditions
see
vertical in still air
Figure 4
10 -4
Rev. 02 — 16 January 2009
10 -3
N-channel TrenchMOS standard level FET
10 -2
BUK755R2-40B
Min
-
-
10 -1
P
Typ
-
60
t p
T
t p (s)
© NXP B.V. 2009. All rights reserved.
δ =
Max
0.74
-
03nj25
t p
T
t
1
Unit
K/W
K/W
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