BUK755R2-40B NXP Semiconductors, BUK755R2-40B Datasheet - Page 8

• Manufacturer Part Number: BUK755R2-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK755R2-40B_2
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R DSon
(mΩ)
(A)
I D
100
10
75
50
25
8
6
4
2
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
label is V GS (V)
6
100
2
7
T j = 175 °C
200
8
4
300
T j = 25 °C
V GS (V)
I D (A)
03nk17
03nk20
10
20
400
Rev. 02 — 16 January 2009
6
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK755R2-40B
60
60
max
min
typ
120
120
© NXP B.V. 2009. All rights reserved.
03aa27
T
T
j
j
(°C)
( ° C)
03aa32
180
180
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