BUK7606-55B NXP Semiconductors, BUK7606-55B Datasheet - Page 4

• Manufacturer Part Number: BUK7606-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7606-55B
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
150
100
10
10
50
10
1
0
3
2
10
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
−1
Capped at 75 A due to package
50
100
Limit R
150
Capped at 75 A due to package
All information provided in this document is subject to legal disclaimers.
T
mb
DSon
1
(°C)
03nl98
= V
200
DS
Rev. 02 — 21 June 2010
/I
D
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
10
DC
50
BUK7606-55B
100
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
t
p
T
100 ms
= 10 μs
mb
100 μs
1 ms
10 ms
03na19
(°C)
03nl96
200
10
2
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