BUK7606-55B NXP Semiconductors, BUK7606-55B Datasheet - Page 8

• Manufacturer Part Number: BUK7606-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7606-55B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
100
14
12
10
75
50
25
0
8
6
4
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
70
2
6
140
T
j
= 175 °C
210
Label is V
4
7
T
j
V
280
= 25 °C
All information provided in this document is subject to legal disclaimers.
GS
GS
I
(V)
D
8
03nl91
03nl94
(V)
10
(A)
20
350
6
Rev. 02 — 21 June 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
1.5
0.5
a
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7606-55B
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
T
T
j
j
03ne89
(°C)
( ° C)
03aa32
180
180
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