BUK92150-55A NXP Semiconductors, BUK92150-55A Datasheet - Page 6

• Manufacturer Part Number: BUK92150-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BUK92150-55A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
V
see
V
V
see
I
T
V
T
V
R
measured from drain to centre of die ;
T
measured from source lead to source
bond pad ; T
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
S
S
j
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C; see
= 25 °C
= 15 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 5 A; V
Figure 10
Figure 10
Figure 10
Figure
Figure
Figure 15
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 20 V; R
= 10 V; I
= 5 V; I
= 4.5 V; I
= 5 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 05 — 24 March 2011
DS
11; see
11; see
D
D
GS
S
DS
DS
DS
GS
GS
DS
j
D
/dt = -100 A/µs;
= 5 A; T
D
= 5 A; T
= 44 V; V
= 25 °C
GS
GS
L
DS
= 5 A; T
= 0 V; T
= V
= V
= V
= 5 A; T
Figure 13
Figure 14
= 3.3 Ω; V
GS
GS
= 10 V; T
= -10 V; T
= 25 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
= 25 °C
= 30 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
Figure 12
; T
; T
; T
j
j
= 175 °C;
= 25 °C;
j
j
GS
j
= 25 °C;
= 25 °C
j
j
j
= 25 °C
j
j
j
= -55 °C;
= 25 °C;
= 175 °C;
j
GS
= 175 °C
= 25 °C
= 25 °C
= 5 V;
= 25 °C
j
j
j
= 25 °C
= -55 °C
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK92150-55A
Min
55
50
-
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.5
-
-
0.05
2
2
97
-
-
120
6
0.76
2.6
240
50
40
8
57
16
13
2.5
7.5
0.85
24
26
© NXP B.V. 2011. All rights reserved.
65
-
Max
-
-
2.3
2
-
500
10
100
100
125
280
155
140
-
-
-
338
58
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
nC
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