BUK92150-55A NXP Semiconductors, BUK92150-55A Datasheet - Page 9

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK92150-55A

Manufacturer Part Number
BUK92150-55A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
BUK92150-55A
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
V
DD
= 14 V
2
(A)
4
I
S
30
20
10
V
0
DD
Q
0
All information provided in this document is subject to legal disclaimers.
G
= 44 V
(nC)
03nf40
T
j
= 175 °C
Rev. 05 — 24 March 2011
6
0.5
1.0
Fig 14. Input, output and reverse transfer capacitances
T
j
(pF)
= 25 °C
C
600
400
200
1.5
0
as a function of drain-source voltage; typical
values
10
V
−2
SD
03nf39
(V)
N-channel TrenchMOS logic level FET
2.0
10
−1
BUK92150-55A
1
C
C
C
oss
rss
iss
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nf46
(V)
10
2
9 of 14

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