BUK9606-55B NXP Semiconductors, BUK9606-55B Datasheet - Page 2

• Manufacturer Part Number: BUK9606-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK9606-55B_4
Product data sheet
Pin
1
2
3
mb
Type number
BUK9606-55B
It is not possible to make a connection to pin 2.
Symbol
G
D
S
D
Pinning information
Ordering information
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Symbol Parameter
Static characteristics
R
DSon
Continuous current is limited by package.
drain-source
on-state resistance
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Quick reference
Rev. 04 — 23 July 2009
…continued
[1]
Conditions
V
T
see
V
T
see
j
j
GS
GS
= 25 °C;
= 25 °C;
Simplified outline
Figure 11
Figure 11
= 10 V; I
= 5 V; I
D
D
= 25 A;
and
and
(D2PAK)
SOT404
= 25 A;
1
mb
2
12
12
3
BUK9606-55B
N-channel TrenchMOS FET
Graphic symbol
Min
-
-
Typ
4.8
5.1
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
5.4
6
D
Version
SOT404
S
Unit
mΩ
mΩ
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