BUK9606-55B NXP Semiconductors, BUK9606-55B Datasheet - Page 4
BUK9606-55B
Manufacturer Part Number
BUK9606-55B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9606-55B.pdf
(13 pages)
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NXP Semiconductors
BUK9606-55B_4
Product data sheet
Fig 3.
I
(A)
10
D
10
10
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
Capped at 75 A due to package
1
DSon
= V
Rev. 04 — 23 July 2009
DS
/ I
D
DC
10
BUK9606-55B
N-channel TrenchMOS FET
V
DS
(V)
© NXP B.V. 2009. All rights reserved.
t
p
= 10 μ s
100 μ s
1 ms
10 ms
100 ms
03nh83
10
2
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