BUK9606-55B NXP Semiconductors, BUK9606-55B Datasheet - Page 5

• Manufacturer Part Number: BUK9606-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9606-55B_4
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.1
0.05
Thermal characteristics
δ = 0.5
0.2
0.02
single shot
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
10
-5
Conditions
see
Figure 4
10
-4
Rev. 04 — 23 July 2009
10
-3
10
-2
Min
-
-
BUK9606-55B
N-channel TrenchMOS FET
10
P
-1
Typ
-
50
t
p
T
t
p
© NXP B.V. 2009. All rights reserved.
(s)
δ =
Max
0.58
-
03nh84
T
t
p
t
1
Unit
K/W
K/W
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