BUK9E06-55A NXP Semiconductors, BUK9E06-55A Datasheet - Page 5

• Manufacturer Part Number: BUK9E06-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Characteristics
Table 6.
BUK9E06-55A
Product data sheet
Symbol
R
R
Symbol
Static characteristics
V
V
I
I
DSS
GSS
Fig 4.
(BR)DSS
GS(th)
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10
−5
Conditions
see
vertical in still air
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
DS
DS
DS
DS
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
Figure 4
Figure 11
Figure 11
Figure 11
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
10
−4
Rev. 04 — 31 May 2010
DS
DS
DS
GS
GS
GS
GS
= V
= V
= V
GS
GS
= 10 V; T
= -10 V; T
= 0 V; T
= 0 V; T
10
= 0 V; T
= 0 V; T
GS
GS
GS
−3
; T
; T
; T
j
j
j
j
j
j
= 25 °C;
= -55 °C;
= 175 °C;
j
= 175 °C
= 25 °C
= 25 °C
= 25 °C
j
j
= 25 °C
= -55 °C
10
−2
N-channel TrenchMOS logic level FET
P
10
t
p
−1
T
t
BUK9E06-55A
p
δ =
Min
-
-
Min
55
50
1
-
0.5
-
-
-
-
(s)
03nf03
t
T
t
p
1
Typ
-
60
Typ
-
-
1.5
-
-
-
0.05
2
2
© NXP B.V. 2010. All rights reserved.
Max
0.5
-
Max
-
-
2
2.3
-
500
10
100
100
Unit
K/W
K/W
Unit
V
V
V
V
V
µA
µA
nA
nA
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