BUK9E06-55A NXP Semiconductors, BUK9E06-55A Datasheet - Page 9

• Manufacturer Part Number: BUK9E06-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9E06-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
1.5
0.5
a
2
1
0
-60
factor as a function of junction temperature
0
60
(A)
I
S
100
80
60
40
20
120
0
0
All information provided in this document is subject to legal disclaimers.
T
j
03ne89
( ° C)
0.2
180
Rev. 04 — 31 May 2010
T
j
= 175 °C
0.4
Fig 14. Input, output and reverse transfer capacitances
0.6
C (pF)
18000
16000 Ciss
14000
12000
10000
8000
6000
4000
2000
0
10
as a function of drain-source voltage; typical
values
0.8
−2
T
Coss
Crss
j
V
= 25 °C
SD
03ne94
(V)
N-channel TrenchMOS logic level FET
1.0
10
−1
BUK9E06-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nf01
(V)
10
2
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