BUK9MRR-65PKK NXP Semiconductors, BUK9MRR-65PKK Datasheet - Page 4

Dual N-channel enhancement mode field-effect power transistor in SO20

BUK9MRR-65PKK

Manufacturer Part Number
BUK9MRR-65PKK
Description
Dual N-channel enhancement mode field-effect power transistor in SO20
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BUK9MRR-65PKK
Product data sheet
Fig 1.
Fig 3.
P
(%)
120
der
80
40
0
function of solder point temperature, FET1 and
FET2
Normalized total power dissipation as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
10
10
D
10
10
−1
−2
1
2
10
−1
100
150
All information provided in this document is subject to legal disclaimers.
003aab388
T
sp
Limit R
(°C)
1
200
DSon
Rev. 02 — 17 June 2010
= V
DS
/ I
D
Fig 2.
DC
I
(A)
AL
10
10
10
−1
−2
1
10
avalanche current as a function of avalanche
time. FET1 and FET2.
Single-Pulse and repetitive avalanche rating;
−3
10
Dual TrenchPLUS FET Logic Level FET
BUK9MRR-65PKK
10
V
−2
DS
(V)
001aal761
10
−1
t
10 ms
100 μs
1 ms
100 ms
p
= 10 μs
10
2
1
© NXP B.V. 2010. All rights reserved.
(1)
(2)
(3)
t
AL
001aal683
(ms)
10
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