BSH111 NXP Semiconductors, BSH111 Datasheet - Page 6

• Manufacturer Part Number: BSH111
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 5:
T
9397 750 09629
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
SD
r
= 25 C unless otherwise specified
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
…continued
Conditions
I
Figure 13
I
dI
V
S
S
GS
S
= 300 mA; V
= 300 mA;
/dt = 100 A/ s;
= 0 V; V
Rev. 02 — 26 April 2002
DS
GS
= 25 V
= 0 V;
N-channel enhancement mode field-effect transistor
Min
-
-
-
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
0.95
30
30
Max
1.5
-
-
BSH111
Unit
V
ns
nC
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