BSH111 NXP Semiconductors, BSH111 Datasheet - Page 7

• Manufacturer Part Number: BSH111
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09629
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
T
(A)
I
D
( )
j
j
0.8
0.6
= 25 C
= 25 C
0.4
0.2
16
20
12
function of drain-source voltage; typical values.
of drain current; typical values.
0
8
4
0
0
0
1.4 V
1.6 V
1.8 V
0.4
0.2
2 V
0.8
3 V
0.4
1.2
V GS = 4.5 V
V GS = 4.5 V
0.6
1.6
V DS (V)
I D (A)
03aa73
1.8 V
1.6 V
1.4 V
3 V
03aa74
2 V
0.8
2
Rev. 02 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
(A)
I D
a
T
a
j
2.4
1.8
= 25 C and 150 C; V
=
1.2
0.6
0.6
0.4
0.2
0.8
function of gate-source voltage; typical values.
factor as a function of junction temperature.
0
0
--------------------------- -
R
-60
DSon 25 C
0
R
DSon
1
0
2
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
T j = 25 C
60
I
D
3
R
DSon
150 C
120
4
T j ( C)
BSH111
V GS (V)
03aa75
180
5
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