BSH111 NXP Semiconductors, BSH111 Datasheet - Page 9

• Manufacturer Part Number: BSH111
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09629
Product data
Fig 13. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
0.8
0.6
0.4
0.2
source-drain (diode forward) voltage; typical
values.
0
1
0
0.4
150 C
GS
0.8
= 0 V
T j = 25 C
1.2
V SD (V)
03aa77
1.6
Rev. 02 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of gate
V GS
(V)
I
D
= 0.5 A; V
4
6
2
0
8
charge; typical values.
0
DS
0.2
= 44 V
0.4
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
0.6
0.8
BSH111
Q G (nC)
03ab08
1
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