BSP030 NXP Semiconductors, BSP030 Datasheet
BSP030
Available stocks
Related parts for BSP030
BSP030 Summary of contents
Page 1
... BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSP030 in SOT223. 2. Features TrenchMOS™ technology Fast switching Low on-state resistance Logic level compatible Surface mount package. ...
Page 2
... T = 100 4.5 V; Figure pulsed Figure Figure pulsed Rev. 04 — 26 July 2000 BSP030 Typ Max Unit 8.3 W 150 Min Max Unit ...
Page 3
... der Fig 2. Normalized continuous drain current as a function of solder point temperature. R DSon = D. Rev. 04 — 26 July 2000 BSP030 03aa25 120 100 100 125 150 4 ------------------ - ...
Page 4
... Z th(j-sp) (K/W) = 0.5 10 0.2 0.1 1 0.05 0. single pulse Mounted on a metal clad substrate. pulse duration. Rev. 04 — 26 July 2000 BSP030 Value Unit 15 K/W 100 K/W 03ac21 (s) © Philips Electronics N.V. 2000. All rights reserved. ...
Page 5
... Figure MHz; Figure Rev. 04 — 26 July 2000 BSP030 Typ Max Unit 2 3 100 100 ...
Page 6
... 10V (A) R DSon a = --------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 04 — 26 July 2000 BSP030 Min Typ Max 0.73 1.0 120 150 03ac27 V DS > DSon 150 0.5 1 1.5 2 2.5 3 3 (V) ...
Page 7
... C iss , C oss , 150 rss (pF ( MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 04 — 26 July 2000 BSP030 03aa37 ( min typ ...
Page 8
... Product specification N-channel enhancement mode field-effect transistor 03ac29 0 Fig 14. Gate-source voltage as a function of gate charge; typical values. Rev. 04 — 26 July 2000 BSP030 03ac31 ...
Page 9
... scale 6.7 3.7 7.3 1.1 4.6 2.3 6.3 3.3 6.7 0.7 REFERENCES JEDEC EIAJ SC-73 Rev. 04 — 26 July 2000 BSP030 detail 0.95 0.2 0.1 0.1 0.85 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Philips Electronics N.V. 2000. All rights reserved. SOT223 ...
Page 10
... Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove). 03 19970313 - Product specification; third version; supersedes BSP030_2 of 970120. 02 19970120 - Product specification; second version; supersedes BSP030_1 of 961111. 01 19961111 - Product specification; initial version. 9397 750 07268 Product specification N-channel enhancement mode field-effect transistor Rev. 04 — ...
Page 11
... Rev. 04 — 26 July 2000 BSP030 Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...
Page 12
... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 04 — 26 July 2000 BSP030 © Philips Electronics N.V. 2000. All rights reserved ...
Page 13
... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 July 2000 Document order number: 9397 750 07268 N-channel enhancement mode field-effect transistor Printed in The Netherlands BSP030 ...