BSP030 NXP Semiconductors, BSP030 Datasheet - Page 9

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BSP030

Manufacturer Part Number
BSP030
Description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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9. Package outline
Fig 15. SOT223.
Philips Semiconductors
9397 750 07268
Product specification
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
e
1
c
2
b
6.7
6.3
p
D
JEDEC
4
3.7
3.3
E
REFERENCES
3
Rev. 04 — 26 July 2000
0
4.6
e
w
B
M
2.3
e
SC-73
B
scale
1
EIAJ
2
N-channel enhancement mode field-effect transistor
c
7.3
6.7
H
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
© Philips Electronics N.V. 2000. All rights reserved.
A
L
p
Q
X
BSP030
ISSUE DATE
97-02-28
99-09-13
v
A
M
A
SOT223
9 of 13

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