BSP030 NXP Semiconductors, BSP030 Datasheet - Page 2

• Manufacturer Part Number: BSP030
• Description: Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07268
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
D
DM
S
SM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC)
peak source (diode forward) current
Quick reference data
Limiting values
Conditions
T
T
T
V
V
Conditions
T
T
T
Figure 2
T
T
Figure 3
T
T
T
Rev. 04 — 26 July 2000
j
sp
sp
j
j
sp
sp
sp
sp
sp
sp
GS
GS
= 25 to 150 C
= 25 to 150 C
= 25 to 150 C; R
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 4.5 V; I
and
N-channel enhancement mode field-effect transistor
Figure 1
D
3
D
GS
GS
= 5 A
= 2.5 A
GS
= 4.5 V
= 4.5 V;
= 4.5 V;
GS
p
p
= 20 k
10 s;
10 s
Figure 2
Typ
20
30
Min
65
65
© Philips Electronics N.V. 2000. All rights reserved.
Max
30
10
8.3
150
30
50
Max
30
30
10
6.3
40
8.3
+150
+150
9
40
BSP030
20
Unit
V
A
W
m
m
Unit
V
V
V
A
A
A
W
A
A
C
C
C
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