BSP230 NXP Semiconductors, BSP230 Datasheet - Page 2

• Manufacturer Part Number: BSP230
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
PINNING - SOT223
QUICK REFERENCE DATA
1997 Oct 21
V
V
V
I
R
P
D
SYMBOL
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
Line current interruptor in telephone sets
Relay, high speed and line transformer drivers.
DS
GSO
GSth
tot
DSon
P-channel enhancement mode
vertical D-MOS transistor
PIN
1
2
3
4
drain-source voltage (DC)
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
SYMBOL
g
d
s
d
PARAMETER
gate
drain
source
drain
DESCRIPTION
open drain
I
I
T
D
D
amb
= 1 mA; V
= 170 mA; V
2
25 C
CONDITIONS
handbook, halfpage
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
DS
GS
= V
= 10 V
Top view
Fig.1 Simplified outline and symbol.
GS
1
2
4
CAUTION
3
1.95
MAM121
MIN.
Product specification
g
17
1.5
300
20
2.8
210
MAX.
BSP230
d
s
V
V
V
mA
W
UNIT