BSP230 NXP Semiconductors, BSP230 Datasheet - Page 5

• Manufacturer Part Number: BSP230
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Oct 21
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
V
T
f = 1 MHz.
Fig.6
V
T
j
j
GS
DS
(mA)
= 25 C.
= 25 C.
(pF)
I D
100
C
800
600
400
200
= 25 V.
= 0.
80
60
40
20
0
0
0
0
Fig.8 Typical transfer characteristics.
Capacitance as a function of drain source
voltage; typical values.
2
10
4
C oss
C rss
C iss
6
20
V DS (V)
8
V GS (V)
MLC688
MLC689
30
10
5
handbook, halfpage
handbook, halfpage
R DSon
T
I
T
Fig.9
D
j
j
( )
(mA)
= 25 C.
= 25 C.
= 170 mA.
I D
800
600
400
200
80
60
40
20
0
0
0
0
Fig.7 Typical output characteristics.
Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
P = 1.5 W
2
2
4
4
6
6
V GS =
8
Product specification
8
V GS (V)
10
V DS (V)
BSP230
3.5 V
10 V
MLC691
MLC690
7 V
6 V
5 V
4 V
3 V
10
12