BSP230 NXP Semiconductors, BSP230 Datasheet - Page 6

• Manufacturer Part Number: BSP230
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Oct 21
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
R DSon
T
Fig.10 Drain-source on-state resistance as a
Typical R
Fig.12 Temperature coefficient of drain-source
k
j
( )
= 25 C.
=
k
2.5
1.5
0.5
---------------------------------------- -
R
60
50
40
30
20
10
2
1
0
0
DSon
R
1
50
DSon
DSon
function of drain current; typical values.
on-state resistance.
at 25 C
at T
at I
D
j
= 170 mA; V
0
10
V GS = 3 V
GS
50
= 10 V.
10
2
10 V
6 V
7 V
100
I D (mA)
4 V
T j ( C)
MLC695
MLC692
5 V
10
150
3
6
handbook, halfpage
Typical V
Fig.11 Temperature coefficient of gate-source
k
=
1.1
1.0
0.9
0.8
k
------------------------------------- -
V
GSth
V
GSth
50
GSth
threshold voltage.
at 25 C
at T
at I
D
j
= 1 mA; V
0
DS
= V
50
GS
.
Product specification
100
T j ( C)
BSP230
MLC696
150