PHB110NQ08T NXP Semiconductors, PHB110NQ08T Datasheet - Page 3

• Manufacturer Part Number: PHB110NQ08T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB110NQ08T_2
Product data sheet
Fig 1.
Fig 3.
(%)
120
I
der
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
1
3
2
1
P
100
t
p
R
T
DSon
150
δ =
= V
T
t
T
p
t
mb
DS
/I
03ap74
(°C)
D
200
Rev. 02 — 12 October 2009
10
D.C.
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
(V)
50
PHB110NQ08T
100
03nb44
t
100 us
1 ms
10 ms
100 ms
p
= 10 us
10
2
150
© NXP B.V. 2009. All rights reserved.
T
mb
03aa16
(°C)
200
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