PHB110NQ08T NXP Semiconductors, PHB110NQ08T Datasheet - Page 4

• Manufacturer Part Number: PHB110NQ08T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHB110NQ08T_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
−1
−2
1
10
−4
0.05
0.02
δ = 0.5
0.2
0.1
single pulse
10
Conditions
see
mounted on printed-circuit board;
minimum footprint; vertical in still air
−3
Figure 4
Rev. 02 — 12 October 2009
10
−2
N-channel TrenchMOS standard level FET
10
−1
P
t
p
t
p
T
(s)
PHB110NQ08T
Min
-
-
δ =
03ap75
T
t
t
p
1
Typ
-
50
© NXP B.V. 2009. All rights reserved.
Max
0.65
-
Unit
K/W
K/W
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