PHB110NQ08T NXP Semiconductors, PHB110NQ08T Datasheet - Page 8
PHB110NQ08T
Manufacturer Part Number
PHB110NQ08T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PHB110NQ08T.pdf
(12 pages)
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PHB110NQ08T_2
Product data sheet
Fig 13. Source current as a function of source-drain voltage; typical values
(A)
I
S
75
50
25
0
0
V
GS
= 0 V
Rev. 02 — 12 October 2009
0.3
175 °C
0.6
T
0.9
j
= 25 °C
V
N-channel TrenchMOS standard level FET
SD
03ap80
(V)
1.2
PHB110NQ08T
© NXP B.V. 2009. All rights reserved.
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