PHB47NQ10T NXP Semiconductors, PHB47NQ10T Datasheet - Page 3

• Manufacturer Part Number: PHB47NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHB47NQ10T_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
50
100
Conditions
T
T
V
V
t
T
t
V
unclamped; t
T
p
p
j
j
mb
mb
GS
GS
GS
150
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
All information provided in this document is subject to legal disclaimers.
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 5 V; T
T
mb
03aa24
(°C)
Rev. 02 — 25 February 2010
200
j
j
j(init)
p
≤ 175 °C
≤ 175 °C; R
mb
mb
= 0.1 ms; R
= 100 °C; see
= 25 °C; see
= 25 °C; I
Figure 3
mb
mb
= 25 °C; see
= 25 °C
GS
Fig 2.
GS
D
(A)
= 30 A; V
I
= 20 kΩ
D
= 50 Ω; see
Figure 1
Figure 1
10
10
10
3
2
1
currents as a function of drain-source voltage
Safe operating area; continuous and peak drain
1
R
Figure 2
N-channel TrenchMOS standard level FET
DSon
sup
and
≤ 25 V;
Figure 4
= V
2
DS
/ I
10
D
D.C.
PHB47NQ10T
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
10
2
t
1 μs
10 μs
100 μs
1 ms
10 ms
100 ms
p
=
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa097
Max
100
100
20
33
47
187
166
175
175
47
187
45
(V)
10
3
V
°C
°C
Unit
V
V
A
A
A
W
A
A
mJ
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