PHB47NQ10T NXP Semiconductors, PHB47NQ10T Datasheet - Page 8

• Manufacturer Part Number: PHB47NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB47NQ10T_2
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
C
iss
C
(nF)
, C
rss
oss
5
4
3
2
1
0
10
as a function of drain-source voltage; typical
values
,
−2
C
rss
C
10
oss
−1
C
iss
1
10
All information provided in this document is subject to legal disclaimers.
V
003aaa105
DS
(V)
Rev. 02 — 25 February 2010
10
2
Fig 15. Source current as a function of source-drain
(A)
I
S
100
80
20
60
40
0
voltage; typical values
0
N-channel TrenchMOS standard level FET
0.2
0.4
T
j
0.6
= 175 °C
PHB47NQ10T
0.8
1.0
25 °C
© NXP B.V. 2010. All rights reserved.
V
SD
003aaa106
1.2
(V)
1.4
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