PHB47NQ10T NXP Semiconductors, PHB47NQ10T Datasheet - Page 7

• Manufacturer Part Number: PHB47NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB47NQ10T_2
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
4.5
3.5
2.5
1.5
0.5
0
4
3
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
-20
−20
20
20
60
60
max
typ
min
100
100
T
j
(°C)
All information provided in this document is subject to legal disclaimers.
140
140
003aaa023
003aaa103
T
j
(°C)
Rev. 02 — 25 February 2010
180
180
Fig 11. Drain-source on-state resistance as a function
Fig 13. Gate-source voltage as a function of gate
R
(mΩ)
DSon
V
(V)
GS
10
65
60
55
50
45
40
35
30
15
25
20
8
6
4
2
0
of drain current; typical values
charge; typical values
5
0
N-channel TrenchMOS standard level FET
V
GS
10
= 5.5 V
25
20
45
V
DD
30
= 20 V
PHB47NQ10T
65
6.0 V
40
V
85
DD
50
6.5 V
= 80 V
© NXP B.V. 2010. All rights reserved.
105
003aaa102
60
003aaa107
Q
I
D
G
10 V
7.0 V
7.5 V
8.0 V
(A)
(nC)
125
70
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