PHP23NQ11T NXP Semiconductors, PHP23NQ11T Datasheet - Page 3

• Manufacturer Part Number: PHP23NQ11T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP23NQ11T_2
Product data sheet
Fig 1.
Fig 3.
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
10
D
10
10
−1
1
2
1
Limit R
100
DSon
= V
150
DS
All information provided in this document is subject to legal disclaimers.
T
/I
mb
D
03aa24
(°C)
Rev. 02 — 25 February 2010
10
200
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS standard level FET
2
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
50
V
DS
(V)
100
PHP23NQ11T
03ao51
10
3
150
© NXP B.V. 2010. All rights reserved.
T
mb
03aa16
(°C)
200
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