PHP23NQ11T NXP Semiconductors, PHP23NQ11T Datasheet - Page 4

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHP23NQ11T

Manufacturer Part Number
PHP23NQ11T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
PHP23NQ11T
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5. Thermal characteristics
Table 5.
PHP23NQ11T_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to ambient vertical in still air
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
10
−5
single pulse
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 25 February 2010
−4
Conditions
see
10
Figure 4
−3
10
−2
N-channel TrenchMOS standard level FET
P
10
t
p
−1
T
Min
-
-
t
p
δ =
(s)
PHP23NQ11T
03ao50
T
t
t
p
1
Typ
-
60
© NXP B.V. 2010. All rights reserved.
Max
1.5
-
K/W
Unit
K/W
4 of 13

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