PHP23NQ11T NXP Semiconductors, PHP23NQ11T Datasheet - Page 6

• Manufacturer Part Number: PHP23NQ11T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP23NQ11T_2
Product data sheet
Fig 5.
Fig 7.
V
GS(th)
(V)
(A)
I
D
20
15
10
5
0
5
4
3
2
1
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V
GS
0.5
0
= 10 V
60
1
6 V
8 V
max
min
typ
120
1.5
All information provided in this document is subject to legal disclaimers.
T j = 25 °C
V
T
DS
j
(°C)
03aa32
03ao52
5.4 V
5.2 V
4.8 V
4.6 V
4.4 V
(V)
5 V
Rev. 02 — 25 February 2010
180
2
Fig 6.
Fig 8.
(A)
(A)
I
10
10
10
10
10
10
I
D
D
20
15
10
−1
−2
−3
−4
−5
−6
5
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
V
N-channel TrenchMOS standard level FET
DS
> I
D
x R
DSon
2
2
150 °C
min
PHP23NQ11T
typ
4
4
max
V
© NXP B.V. 2010. All rights reserved.
T
V
GS
j
GS
= 25 °C
(V)
(V)
03aa35
03ao54
6
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