PHT4NQ10T NXP Semiconductors, PHT4NQ10T Datasheet - Page 3

• Manufacturer Part Number: PHT4NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09581
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain
T
P
(A)
I D
P der
sp
der
(%)
10 -2
10 -1
120
10 2
10
80
40
function of solder point temperature.
= 25 C; I
currents as a function of drain-source voltage.
1
0
=
0
1
----------------------
P
Limit R DSon = V DS /I D
tot 25 C
P
tot
DM
is single pulse.
50
100%
DC
10
100
10 2
100 ms
10 ms
t p = 10 s
1 ms
150
100 s
V DS (V)
T sp ( C)
03aa17
03aa88
10 3
200
Rev. 02 — 2 May 2002
Fig 2. Normalized continuous drain current as a
Fig 4. Non-repetitive avalanche ruggedness current
V
Unclamped inductive load; V
V
I
I der
(%)
der
I AS
GS
GS
10 -1
(A)
120
10
80
40
function of solder point temperature.
as a function of pulse duration.
0
1
= 10 V; starting T
=
10 -2
0
10 V
------------------ -
I
T j prior to avalanche = 125 C
D 25 C
I
D
50
100%
TrenchMOS™ standard level FET
10 -1
j
= 25 C and 125 C.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
100
DD
PHT4NQ10T
15 V; R
1
25 C
150
t p (ms)
GS
T sp ( C)
= 50 ;
03aa25
03aa97
200
10
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