PHT4NQ10T NXP Semiconductors, PHT4NQ10T Datasheet - Page 5

• Manufacturer Part Number: PHT4NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 09581
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
Conditions
I
V
V
V
V
V
Figure 12
I
V
V
f = 1 MHz;
V
V
I
Figure 14
I
dI
V
D
D
D
S
S
DS
DS
GS
GS
DS
GS
GS
DD
GS
GS
S
T
T
T
T
T
T
T
T
T
T
= 250 A; V
= 1 mA; V
= 3.5 A; V
= 3.5 A; V
= 3.5 A;
/dt = 100 A/ s;
j
j
j
j
j
j
j
j
j
j
= 100 V; V
= 60 V; V
= 5 V; I
= 25 C
= 55 C
= 25 C;
= 150 C;
= 55 C;
= 25 C
= 150 C
= 85 C
= 20 V; V
= 10 V; I
= 25 C;
= 150 C;
= 10 V;
= 0 V; V
= 50 V; R
= 10 V; R
= 0 V; V
Rev. 02 — 2 May 2002
Figure 13
D
Figure 15
DS
DS
GS
DS
DS
D
= 3.5 A;
Figure 10
Figure 8
GS
D
G
GS
Figure 10
Figure 10
Figure 9
= 1.75 A
GS
DS
= V
= 80 V;
= 0 V;
= 25 V;
= 30 V
= 15 ;
= 6
= 0 V
= 0 V
= 0 V
= 0 V
GS
and
9
Min
100
89
2
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
130
-
3
-
-
1
4
-
10
200
-
4.2
7.4
1.5
3.3
300
44
21
8
13
20
11
0.87
50
100
PHT4NQ10T
Max
-
-
4
-
6
25
250
1
100
250
575
-
-
-
-
-
-
-
-
-
-
1.5
-
-
Unit
V
V
V
V
V
nA
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
5 of 12
A
A
A