PHT8N06LT NXP Semiconductors, PHT8N06LT Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHT8N06LT

Manufacturer Part Number
PHT8N06LT
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection. It is intended for use in
DC-DC converters and general
purpose switching applications.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
January 1998
TrenchMOS
Logic level FET
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
V
D
D
D
DM
PIN
V
stg
DS
DGR
tot
tot
C
1
2
3
4
GS
, T
j
gate
drain
source
drain (tab)
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage
transistor
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
On PCB in Fig.2
T
On PCB in Fig.2
T
T
T
On PCB in Fig.2
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
1
sp
amb
amb
sp
sp
amb
GS
PARAMETER
Drain-source voltage
Drain current
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
= 25 ˚C
= 100 ˚C
= 25 ˚C
1
2
4
3
V
GS
= 5 V
SYMBOL
MIN.
MIN.
- 55
-
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
150
7.5
1.8
55
80
MAX.
MAX.
150
7.5
3.5
2.2
8.3
1.8
55
55
13
40
2
PHT8N06LT
d
s
Rev 1.100
UNIT
UNIT
UNIT
kV
W
W
˚C
m
V
V
V
A
A
A
A
W
˚C
V
A

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PHT8N06LT Summary of contents

Page 1

... On PCB in Fig ˚C amb On PCB in Fig 100 ˚C amb ˚ ˚ PCB in Fig ˚C amb - CONDITIONS Human body model (100 pF, 1 Product specification PHT8N06LT MAX. 55 7.5 1.8 150 SYMBOL MIN. MAX. UNIT - 7 ...

Page 2

... 25˚C j CONDITIONS T = 25˚ 25˚ -dI /dt = 100 - Product specification PHT8N06LT TYP. MAX. UNIT K/W MIN. TYP. MAX. UNIT 1.0 1.5 2 ...

Page 3

... Philips Semiconductors TrenchMOS transistor Logic level FET AVALANCHE LIMITING VALUE SYMBOL PARAMETER W Drain-source non-repetitive DSS unclamped inductive turn-off energy January 1998 CONDITIONS ˚ Product specification PHT8N06LT MIN. TYP. MAX. UNIT - - 30 mJ Rev 1.100 ...

Page 4

... GS RDS(ON)/mOhm 115 110 tp = 105 1 us 10us 100 100 10ms 80 100ms 100 = 25 ˚C Fig.6. Typical on-state resistance Product specification PHT8N06LT Zth/ (K/W) 0.5 0.2 0.1 0.05 0. 1.0E-06 0.0001 0.01 1 t/s Fig.4. Transient thermal impedance f(t); parameter j- VGS = 5 ...

Page 5

... 100 150 200 0.01 Fig.12. Typical capacitances f Product specification PHT8N06LT VGS(TO max. typ. min. - 100 Fig.10. Gate threshold voltage. = f(T ); conditions mA; V GS(TO Sub-Threshold Conduction 2% typ 98% 0 0.5 1 1.5 2 Fig ...

Page 6

... VDS = 44V Fig.15. Normalised avalanche energy rating VGS 0 1 Product specification PHT8N06LT WDSS 100 120 Tmb / f(T ); conditions 2.5 A DSS VDS T.U. RGS shunt Fig.16. Avalanche energy test circuit ...

Page 7

... Philips Semiconductors TrenchMOS transistor Logic level FET PRINTED CIRCUIT BOARD Fig.17. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick). January 1998 Product specification PHT8N06LT Dimensions in mm. 18 4.5 Rev 1.100 ...

Page 8

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". January 1998 3.1 0.32 0.24 2.9 0.10 0. max 1.05 1.8 2.3 max 0.85 Fig.18. SOT223 surface mounting package. 8 Product specification PHT8N06LT 6.7 6 3.7 7.3 6.7 3 0.80 M 0.1 B 0.60 (4x) 4.6 0 Rev 1.100 ...

Page 9

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1998 9 Product specification PHT8N06LT Rev 1.100 ...

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