PHT8N06LT NXP Semiconductors, PHT8N06LT Datasheet - Page 8

• Manufacturer Part Number: PHT8N06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
MECHANICAL DATA
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Refer to surface mounting instructions for SOT223 envelope.
3. Epoxy meets UL94 V0 at 1/8".
January 1998
TrenchMOS
Logic level FET
Dimensions in mm
Net Mass: 0.11 g
damage to MOS gate oxide.
transistor
max
16
max
1.8
0.10
0.02
max
0.32
0.24
10
Fig.18. SOT223 surface mounting package.
13
1.05
0.85
8
1
2.3
3.1
2.9
6.7
6.3
4.6
0.80
0.60
2
4
3
A
B
0.1
(4x)
3.7
3.3
M
Product specification
B
7.3
6.7
PHT8N06LT
0.2
Rev 1.100
M
A