PMF170XP NXP Semiconductors, PMF170XP Datasheet - Page 2

P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMF170XP

Manufacturer Part Number
PMF170XP
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

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PMF170XP
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NXP Semiconductors
3. Ordering information
Table 3.
4. Marking
Table 4.
[1]
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
PMF170XP
Product data sheet
Type number
PMF170XP
Type number
PMF170XP
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
D
DM
S
j
amb
stg
DS
GS
tot
% = placeholder for manufacturing site code
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
Package
Name
SC-70
Description
plastic surface-mounted package; 3 leads
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2011
Conditions
T
V
V
T
T
T
T
j
amb
amb
sp
amb
GS
GS
= 25 °C
= 25 °C
= -4.5 V; T
= -4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Marking code
XD%
amb
amb
= 100 °C
25 °C
[1]
p
≤ 10 µs
20 V, 1 A P-channel Trench MOSFET
[1]
[1]
[2]
[1]
[1]
PMF170XP
Min
-
-12
-
-
-
-
-
-
-55
-55
-65
-
© NXP B.V. 2011. All rights reserved.
2
SOT323
150
150
150
Version
Max
-20
12
-1
-0.7
-4
290
360
1670
-0.4
.
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
2 of 15

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